Saturation in Semiconductors

نویسنده

  • Christoph Dalitz
چکیده

For different models of the electron-phonon interaction, the asymptotic behaviour of the moments of the stationary homogeneous solution of the linear Boltzmann equation is determined in the limit of a high external field. For Hilbert-Schmidt kernels of a finite rank, a result recently proven for kernels of rank one is found generally valid; as a consequence velocity saturation is excluded for these collision models. For a class of singular collision kernels in contrast, velocity saturation is generally obtained.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Nonlocal Photorefractive Screening from Hot Electron Velocity Saturation in Semiconductors.

Intervalley scattering of hot electrons during high-field transport in transverse-field photorefractive quantum wells induces a nonlocal optical response in which photoinduced changes in the refractive index are spatially shifted relative to the optical stimulus, providing an avenue for optical gain. We demonstrate that the onset of the photorefractive phase shift coincides with the onset of ve...

متن کامل

The effect of increasing of iron concentration on the physical properties of zinc-iron ferrite nanoparticles

In this research, zinc-iron ferrite nanoparticles were synthesized by thermal treatment method. The presence of crystalline phases by X-ray diffraction (XRD) was determined by X-ray diffraction (XRD), which confirmed the presence of crystalline phases in all nanoparticles. The particle size and morphology of the nanoparticles were obtained using Field Emission Scanning Electron Microscopy (FESE...

متن کامل

Spin Switch and Spin Amplifier: Magnetic Bipolar Transistor in the Saturation Regime

It is shown that magnetic bipolar transistors can amplify currents even in the saturation regime, in which both the emitter–base and collector–base junctions are forward biased. The collector current and the current gain can change sign as they depend on the relative orientation of the equilibrium spin in the base and on the nonequilibrium spin in the emitter and collector. The predicted phenom...

متن کامل

ANALYSIS OF SOME MAGNETIC PROPERTIES OF DILUTED MAGNETIC SEMICONDUCTORS

The susceptibility and specific heat experimental results of the diluted magnetic semiconductors (DMS) are incorporated in a model based on short-range as well as long-range interaction in a random may of magnetic ions. The so-called nearestneighbor pair approximation (NNPA) is applied. It appears that the calculated values of zero field specific heat and Curie-Weiss temperature based on th...

متن کامل

Investigation of resistive switching in anodized titanium dioxide thin films

In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself c...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997